p-channel enhancement mode mosfet f e a t u r e s a pp li c a t i o n s p o we r m anage m en t i n n o t eboo k c o m pu t e r , por table equipm ent and batte ry pow ered s ys t e m s ; lcd-tv ; lcd-monitor ; net-card p i n d e s cr i p t i o n o r d e r i n g a n d m a r k i n g i n f o r m a t i o n p - c hanne l m o s f e t - 30v /-5.3a , r ds(o n) =65 m w (t y p .) @ v gs =- 10 v r ds(o n) =10 0m w(t y p .) @ v gs =- 4. 5v super high den se cell design reliabl e and rugged lead fr ee av a il abl e ( ro hs com p lian t) t op v iew of sop - 8 ( 1, 2, 3 ) d g d s s (4) (5,6,7,8) s d 1 2 3 4 s s s g
ab so lu te m ax im um r at in gs (t a = 25c unl e ss ot her w is e no t ed) el ect ric al char act eri sti cs (t a = 25c un le ss othe rw is e not ed) symbol parameter rating unit v dss drain-source voltage -30 v gss gate-source voltage 25 v i d * continuous drain current -5.3 i dm * pulsed drain current v gs =-10v -20 a i s * diode continuous forward current -2 a t j maximum junction temperature 150 t stg storage temperature range -55 to 150 c t a =25c 2 p d * maximum power dissipation t a =100c 0.8 w r qja * thermal resistance -junction to ambient 62.5 c /w note: *surface mounted on 1in 2 pad area, t 10sec. ams 9435a symbol parameter test condition min. typ. max. unit static characteristics bv dss drain-source breakdown voltage v gs =0v, i ds =-250m a -30 v v ds =-24v, v gs =0v -1 i dss zero gate voltage drain current t a =25c -30 m a v gs(th) gate thres hold voltage v ds =v gs , i ds =-250m a -1 -1.5 -2 v i gss gate leakage current v gs = 25v, v ds =0v 100 na v gs =-10v, i ds =-4.6a 65 60 r ds(on) a drain-source on -state resistance v gs =-4.5v, i ds =-2a 100 95 m w v sd a diode forward voltage i sd =-2a, v gs =0v -0.9 -1.3 v gate charge characteristics b q g total gate charge 27 32 q gs gate-source charge 4 q gd gate-drain charge v ds = -15v, v gs =-10v, i d s = - 5a 6.5 nc
el ec tr ic al c ha ra ct er is ti cs ( co nt .) (t a = 25c unl e ss ot her w is e no t ed AMS9435A symbol parameter test condition min. typ. max. unit dynamic characteristics b c iss input capacitance 545 c oss output capacitance 85 c rss reverse transfer capacitance v gs =0v, v ds =-15v, frequency =1.0mhz 55 pf t d(on) turn-on delay time 12 t r turn-on rise time 8 15 t d(off) turn-off delay time 25 46 t f turn-off fall time v dd =-15v, r l =15w, i ds = -1a, v gen =-10v, r g =6 w 5 10 ns t rr reverse recovery time 56 ns q rr reverse recovery charge i ds = -4.6a, dl sd /dt=100a/m s 30 nc notes: a : pulse test ; pulse width300m s, duty cycle 2%. b : guaranteed by design, not subject to production testing.
1e-4 1e-3 0.01 0.1 1 10 30 1e-3 0.01 0.1 1 2 mounted on 1in 2 pad r q ja : 62.5 o c/w 0.01 0.02 0.05 0.1 0.2 single pulse duty = 0.5 t y p i c a l c h a r a c t e r i s t i c s -i d - drain current (a) d r a i n c u rr e n t tj - j un c ti on t e m pe ra t ur e ( c ) s a fe o p e ra t i on a r ea -vd s - drain - sou rce v o ltage (v) th e r m al t ra n si e n t i m pe d a n ce s qua r e w a v e pu l s e du r a t i on ( se c ) po w er di ssip ati on ptot - power (w) tj - j un c t i on t e m pe r a t u r e ( c ) -i d - drain current (a) 0 20 40 60 80 100 120 140 160 0.0 0.5 1.0 1.5 2.0 2.5 t a =25 o c 0 20 40 60 80 100 120 140 160 0 1 2 3 4 5 6 t a =25 o c,v g =-10v 0.01 0.1 1 10 100 0.01 0.1 1 10 100 300m s rds(on) limit 1s t a =25 o c 10ms 100ms dc 1ms normalized transient thermal resistance
rds(on) - on - resistance (m w ) dr ai n-s ou rce o n r es ist an ce -i d - d r ai n c u rr en t ( a ) t j - j un c t i on t e m pe r a t u r e ( c ) gat e th r es hold v olt age normalized threshold voltage -vds - dra in - s our ce v ol t age ( v) -i d - drain current (a) ou tpu t c har act eri sti cs t ra n s fe r c ha r act e ri st i cs -vgs - gate - s ource v olt age (v) -i d - drain current (a) t y p i c a l c h a r a c t e r i s t i c s ( c o n t . ) 0 1 2 3 4 5 6 7 8 0 2 4 6 8 10 12 14 16 18 20 -4v -3v v gs = -5, -6, -7, -8, -9, -10v 0 2 4 6 8 10 12 14 16 18 20 20 30 40 50 60 70 80 90 100 110 120 130 140 v gs = -4.5v v gs = -10v 0 1 2 3 4 5 0 2 4 6 8 10 12 14 16 18 20 t j =125 o c t j =25 o c t j =-55 o c -50 -25 0 25 50 75 100 125 150 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 i ds = -250 m a
-vd s - dra in - sou rce v olt age (v) dr ai n-s ou rce o n r es ist an ce normalized on resistance tj - j un c ti on t e m pe r a t ur e ( c ) c - capacitance (pf) -vsd - s ource - dr ain v olt age (v) sour ce-drain diode fo rw ard -i s - source current (a) ca p aci ta n ce ga te c ha rg e q g - g a t e c ha r ge ( n c ) -v gs - gate-source voltage (v) t y p i c a l c h a r a c t e r i s t i c s ( c o n t . ) -50 -25 0 25 50 75 100 125 150 0.00 0.25 0.50 0.75 1.00 1.25 1.50 1.75 2.00 r on @t j =25 o c: 52m w v gs = -10v i ds = -4.6a 0.0 0.3 0.6 0.9 1.2 1.5 1.8 0.1 1 10 20 t j =150 o c t j =25 o c 0 5 10 15 20 25 30 0 100 200 300 400 500 600 700 frequency=1mhz crss coss ciss 0 2 4 6 8 10 12 0 1 2 3 4 5 6 7 8 9 10 v d = -15v i d = -4.6a
p a c k a g i n g i n f o r m a t i o n millimeters inches dim min. max. min. max. a 1.35 1.75 0.053 0.069 a1 0.10 0.25 0.004 0.010 d 4.80 5.00 0.189 0.197 e 3.80 4.00 0.150 0.157 h 5.80 6.20 0.228 0.244 l 0.40 1.27 0.016 0.050 e1 0.33 0.51 0.013 0.020 e2 1.27bsc 0.50bsc f 1 0 8 0 8 s o p -8 p i n ( r e fe r en c e j e de c r eg i s t r a t i on m s - 012 ) h e e1 e2 0 . 0 1 5 x 4 5 d a a1 0.004max. 1 l
c a rr i e r t a p e & r ee l d i m e n s i o n s t ao e w po p ko bo d1 d f p1 c o v e r t a p e d i m e n s i o n s application carrier width cover tape width devices per reel sop- 8 12 9.3 2500 a j b t2 t1 c application a b c j t1 t2 w p e 3301 62 1.5 12.75 + 0.1 5 2 + 0.5 12.4 +0.2 2 0.2 12 + 0.3 - 0.1 8 0.1 1.75 0.1 f d d1 po p1 ao bo ko t sop-8 5.5 0.1 1.550.1 1.55+ 0.25 4.0 0.1 2.0 0.1 6.4 0.1 5.2 0.1 2.1 0.1 0.30.013 (mm)
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